首页 >K4H510838D-UCB>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
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512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbD-dieDDRSDRAMSpecification66TSOP-IIwithPb-Free(RoHScompliant) KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbD-dieDDRSDRAMSpecification KeyFeatures •VDD:2.5V±0.2V,VDDQ:2.5V±0.2VforDDR266,333 •VDD:2.6V±0.1V,VDDQ:2.6V±0.1VforDDR400 •Double-data-ratearchitecture;twodatatransfersperclockcycle •Bidirectionaldatastrobe[DQS](x4,x8)&[L(U)DQS](x16) •Fourbanksoperation •Dif | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbF-dieDDRSDRAMSpecification ConsumerMemory | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbF-dieDDRSDRAMSpecification ConsumerMemory | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbF-dieDDRSDRAMSpecification ConsumerMemory | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbG-dieDDRSDRAMSpecification GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
ConsumerMemory SDRAMProductGuide MemoryDivision November2007 | SamsungSamsung semiconductor 三星三星半导体 | Samsung | ||
512MbG-dieDDRSDRAMSpecification GeneralDescription TheK4H510438G/K4H510838G/K4H511638Gis536,870,912bitsofdoubledataratesynchronousDRAMorganizedas4x33,554,432/4x16,777,216/4x8,388,608wordsby4/8/16bits,fabricatedwithSAMSUNG′shighperformanceCMOStechnology.SynchronousfeatureswithDataStrobeal | SamsungSamsung semiconductor 三星三星半导体 | Samsung |
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