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K4H510838D-UC/LB0中文资料三星数据手册PDF规格书
K4H510838D-UC/LB0规格书详情
Key Features
• VDD : 2.5V ± 0.2V, VDDQ : 2.5V ± 0.2V for DDR266, 333
• VDD : 2.6V ± 0.1V, VDDQ : 2.6V ± 0.1V for DDR400
• Double-data-rate architecture; two data transfers per clock cycle
• Bidirectional data strobe [DQS] (x4,x8) & [L(U)DQS] (x16)
• Four banks operation
• Differential clock inputs(CK and CK)
• DLL aligns DQ and DQS transition with CK transition
• MRS cycle with address key programs
-. Read latency : DDR266(2, 2.5 Clock), DDR333(2.5 Clock), DDR400(3 Clock)
-. Burst length (2, 4, 8)
-. Burst type (sequential & interleave)
• All inputs except data & DM are sampled at the positive going edge of the system clock(CK)
• Data I/O transactions on both edges of data strobe
• Edge aligned data output, center aligned data input
• LDM,UDM for write masking only (x16)
• DM for write masking only (x4, x8)
• Auto & Self refresh
• 7.8us refresh interval(8K/64ms refresh)
• Maximum burst refresh cycle : 8
• 66pin TSOP II Pb-Free package
• RoHS compliant
产品属性
- 型号:
K4H510838D-UC/LB0
- 制造商:
SAMSUNG
- 制造商全称:
Samsung semiconductor
- 功能描述:
512Mb D-die DDR SDRAM Specification 66 TSOP-II with Pb-Free(RoHS compliant)
供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
---|---|---|---|---|---|---|---|
SAMSUNG |
2020+ |
TSOP |
80000 |
只做自己库存,全新原装进口正品假一赔百,可开13%增 |
询价 | ||
SAMSUNG/三星 |
23+ |
NA/ |
195 |
优势代理渠道,原装正品,可全系列订货开增值税票 |
询价 | ||
SAMSUNG |
16+ |
TSOP |
2154 |
一级代理,专注军工、汽车、医疗、工业、新能源、电力 |
询价 | ||
SANSUNG |
21+ |
66TSOP |
35200 |
一级代理/放心采购 |
询价 | ||
SAMSUNG/三星 |
0713+ |
TSOP |
10463 |
只做原厂原装,认准宝芯创配单专家 |
询价 | ||
SAMSUNG |
2020+ |
TSOP |
350000 |
100%进口原装正品公司现货库存 |
询价 | ||
SAMSUNG? |
22+ |
TSOP? |
5000 |
全新原装现货特价.. |
询价 | ||
SAMSUNG/三星 |
23+ |
66TSOP |
13000 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | ||
SAMSUNG/三星 |
23+ |
66TSOP |
90000 |
只做原厂渠道价格优势可提供技术支持 |
询价 | ||
SAMSUNG/三星 |
22+ |
TSSOP66 |
12245 |
现货,原厂原装假一罚十! |
询价 |