512K x 32Bit x 2 Banks Synchronous Graphic RAM

FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of

文件：1.14695 Mbytes 页数：48 Pages

SAMSUNG

三星

512K x 32Bit x 2 Banks Synchronous Graphic RAM

FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of

文件：1.14695 Mbytes 页数：48 Pages

SAMSUNG

三星

512K x 32Bit x 2 Banks Synchronous Graphic RAM

FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of

文件：1.14695 Mbytes 页数：48 Pages

SAMSUNG

三星

512K x 32Bit x 2 Banks Synchronous Graphic RAM

FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of

文件：1.14695 Mbytes 页数：48 Pages

SAMSUNG

三星

512K x 32Bit x 2 Banks Synchronous Graphic RAM

FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of

文件：1.14695 Mbytes 页数：48 Pages

SAMSUNG

三星

512K x 32Bit x 2 Banks Synchronous Graphic RAM

FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of

文件：1.14695 Mbytes 页数：48 Pages

SAMSUNG

三星

512K x 32Bit x 2 Banks Synchronous Graphic RAM

FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of

文件：1.14695 Mbytes 页数：48 Pages

SAMSUNG

三星

512K x 32Bit x 2 Banks Synchronous Graphic RAM

FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of

文件：1.14695 Mbytes 页数：48 Pages

SAMSUNG

三星

512K x 32Bit x 2 Banks Synchronous Graphic RAM

FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of

文件：1.14695 Mbytes 页数：48 Pages

SAMSUNG

三星

512K x 32Bit x 2 Banks Synchronous Graphic RAM

FEATURES • 3.3V power supply • LVTTL compatible with multiplexed address • Dual bank operation • MRS cycle with address key programs -. CAS Latency (2, 3) -. Burst Length (1, 2, 4, 8 & full page) -. Burst Type (Sequential & Interleave) • All inputs are sampled at the positive going edge of

文件：1.14695 Mbytes 页数：48 Pages

SAMSUNG

三星