Silicon Power Rectifier Assemblies Plate Heatsink

Silicon Power Rectifier Assemblies Plate Heatsink ● Complete bridge with heatsinks - no assembly required ● Available in many circuit configurations ● Rated for convection or forced air cooling ● Available with bracket or stud mounting ● Designs include: DO-4, DO-5, DO-8 adn DO-9 rectifiers

文件：283.96 Kbytes 页数：3 Pages

MICROSEMI

美高森美

Silicon Power Rectifier Assemblies Plate Heatsink

Silicon Power Rectifier Assemblies Plate Heatsink ● Complete bridge with heatsinks - no assembly required ● Available in many circuit configurations ● Rated for convection or forced air cooling ● Available with bracket or stud mounting ● Designs include: DO-4, DO-5, DO-8 adn DO-9 rectifiers

文件：283.96 Kbytes 页数：3 Pages

MICROSEMI

美高森美

Silicon Power Rectifier Assemblies Plate Heatsink

Silicon Power Rectifier Assemblies Plate Heatsink ● Complete bridge with heatsinks - no assembly required ● Available in many circuit configurations ● Rated for convection or forced air cooling ● Available with bracket or stud mounting ● Designs include: DO-4, DO-5, DO-8 adn DO-9 rectifiers

文件：283.96 Kbytes 页数：3 Pages

MICROSEMI

美高森美

SWITCHING N-CHANNEL POWER MOSFET

DESCRIPTION The 2SK3793 is N-channel MOS Field Effect Transistor designed for high current switching applications. FEATURES • Super low on-state resistance RDS(on)1 = 125 mΩ MAX. (VGS = 10 V, ID = 6 A) RDS(on)2 = 148 mΩ MAX. (VGS = 4.5 V, ID = 6 A) • Low Ciss: Ciss = 900 pF TYP. • B

文件：175.23 Kbytes 页数：8 Pages

NEC

瑞萨

Silicon N-Channel MOS Type

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.32 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：220.18 Kbytes 页数：6 Pages

TOSHIBA

东芝

Silicon N-Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 1.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 6.0 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 720 V) • Enhancement model: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：221.28 Kbytes 页数：6 Pages

TOSHIBA

东芝

Switching Regulator Applications

文件：235.58 Kbytes 页数：6 Pages

TOSHIBA

东芝

N-Channel 100-V (D-S) MOSFET

文件：966.95 Kbytes 页数：7 Pages

VBSEMI

微碧半导体

Logic Plus™

文件：9.6955 Mbytes 页数：19 Pages

ETCList of Unclassifed Manufacturers

未分类制造商

Logic Plus™

文件：9.6955 Mbytes 页数：19 Pages

ETCList of Unclassifed Manufacturers

未分类制造商