SWITCHING N-CHANNEL POWER MOSFET

The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

文件：77.2 Kbytes 页数：8 Pages

NEC

瑞萨

MOS FIELD EFFECT TRANSISTOR

The 2SK3659 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier.

Renesas

瑞萨

TFSC PACKAGE

VCO FOR UHF/VHF BAND. FEATURES • Good C-V Linearity. • Low Series Resistance. • Small Package : TFSC.

文件：49.62 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

Low Power Inductors

文件：21.09 Kbytes 页数：1 Pages

RHOMBUS-IND

Square Type

文件：32.65 Kbytes 页数：1 Pages

Panasonic

松下