MOS FIELD EFFECT TRANSISTOR

SWITCHING N-CHANNEL POWER MOS FET DESCRIPTION The 2SK3570 is N-channel MOS FET device that features a low on-state resistance and excellent switching characteristics, designed for low voltage high current applications such as DC/DC converter with synchronous rectifier. FEATURES •4.5V d

文件：248.85 Kbytes 页数：10 Pages

RENESAS

瑞萨

N-Channel 20-V (D-S) MOSFET

文件：890.54 Kbytes 页数：6 Pages

VBSEMI

微碧半导体

N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR SWITCHING

DESCRIPTION\nThe 2SK3577 is a switching device which can be driven directly by a 2.5 V power source.\nThe device features a low on-state resistance and excellent switching characteristics, and is suitable for applications such as power switch of portable machine and so on.FEATURES\n• 2.5 V drive ava • 2.5 V drive available\n• Low on-state resistance\n  RDS(on)1= 63 mΩMAX. (VGS= 4.5 V, ID= 2.0 A)\n  RDS(on)2= 65 mΩMAX. (VGS= 4.0 V, ID= 2.0 A)\n  RDS(on)3= 91 mΩMAX. (VGS= 2.5 V, ID= 2.0 A);

Renesas

瑞萨

包装：盒 类别：连接器，互连器件 针座、插头和插座 描述：TERM BLOCK HDR 57POS VERT 3.5MM

Amphenol Anytek

包装：盒 类别：连接器，互连器件 针座、插头和插座 描述：TERM BLOCK HDR 57POS 90DEG 3.5MM

Amphenol Anytek

包装：散装 类别：连接器，互连器件 针座、插头和插座 描述：TERM BLOCK HDR 57POS 90DEG 3.5MM

Amphenol Anytek