IF Filter for Quasi/Split Sound Applications 38,00 MHz

Features ■ TV IF filter for quasi/split sound applications (separate picture and sound channel) ■ Picture channel with Nyquist slope and sound suppression, symmetrical output ■ Customized group delay predistortion ■ Sound channel with pass band for sound carriers between 31,5 MHz and 32,5 MHz

文件：107.11 Kbytes 页数：8 Pages

EPCOS

爱普科斯

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 1.35 Ω (typ.) • High forward transfer admittance: |Yfs| = 3.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 500 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：348.59 Kbytes 页数：3 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 3.7Ω (typ.) • High forward transfer admittance: |Yfs| = 2.6 S (typ.) • Low leakage current: IDSS = 100 μ A (VDS = 720 V) • Enhancement-mode: Vth = 2.0~4.0 V (VDS = 10 V, ID = 1 mA)

文件：94.43 Kbytes 页数：3 Pages

TOSHIBA

东芝

IF Filter for Quasi/Split Sound Applications 38,90 MHz

SAW Components IF Filter for Quasi/Split Sound Applications 38,90 MHz Features ■TV IF filter for quasi/split sound applications (separate picture and sound channel) ■Picture channel with Nyquist slope and sound suppression, symmetrical output ■Customized group delay predistorti

文件：105.23 Kbytes 页数：8 Pages

EPCOS

爱普科斯

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type, π-MOSIV

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：218.78 Kbytes 页数：6 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOS4)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 2.0 Ω (typ.) • High forward transfer admittance: |Yfs| = 4.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 720 V) • Enhancement mode: Vth = 2.0 to 4.0 V (VDS = 10 V, ID = 1 mA)

文件：341.87 Kbytes 页数：3 Pages

TOSHIBA

东芝

IF Filter for Quasi/Split Sound Applications 38,90 MHz

SAW Components IF Filter for Quasi/Split Sound Applications 38,90 MHz Features ■TV IF filter for quasi/split sound applications (separate picture and sound channel) ■Picture channel with Nyquist slope and sound suppression, symmetrical output ■Customized group delay predistorti

文件：105.23 Kbytes 页数：8 Pages

EPCOS

爱普科斯

Silicon N Channel MOS Type Switching Regulator Applications

Switching Regulator Applications • Low drain-source ON resistance: RDS(ON)= 5.6Ω(typ.) • Highforward transferadmittance: |Yfs| = 2.0 S (typ.) • Low leakage current: IDSS= 100 μA (VDS= 720 V) • Enhancement-mode: Vth= 2.0~4.0 V (VDS = 10 V,ID= 1 mA)

文件：249.24 Kbytes 页数：6 Pages

TOSHIBA

东芝

TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSVI)

Switching Regulator Applications. 2SK3567 -> Marking K3567. • Low drain-source ON resistance: RDS (ON)= 1.7 Ω(typ.) • High forward transfer admittance: |Yfs| = 2.5 S (typ.) • Low leakage current: IDSS= 100 μA (max) (VDS= 600 V) • Enhancement mode: Vth= 2.0 to 4.0 V (VDS= 10 V, ID= 1 m

文件：94.43 Kbytes 页数：3 Pages

TOSHIBA

东芝

isc N-Channel MOSFET Transistor

·FEATURES · Drain-source on-resistance: RDS(on) ≤ 0.52Ω@10V ·Low leakage current: IDSS

文件：253.95 Kbytes 页数：2 Pages

ISC

无锡固电