TOSHIBA Field Effect Transistor Silicon N Channel MOS Type (PIE-MOSV)

Switching Regulator Applications • Low drain-source ON resistance: RDS (ON) = 0.48 Ω (typ.) • High forward transfer admittance: |Yfs| = 7.5 S (typ.) • Low leakage current: IDSS = 100 μA (max) (VDS = 450 V) • Enhancement-mode: Vth = 2.4~3.4 V (VDS = 10 V, ID = 1 mA)

文件：230.98 Kbytes 页数：6 Pages

TOSHIBA

东芝

P-Channel Enhancement Mode Field Effect Transistor

Features ● VDS (V) = -30V ● ID = -4.1 A ● RDS(ON) 52m (VGS = -10V) ● RDS(ON) 87m (VGS = -4.5V)

文件：52.49 Kbytes 页数：2 Pages

KEXIN

科信电子

350 mA, Constant Current Output Floating Buck Switching Converter for High Power LEDs

文件：373.12 Kbytes 页数：16 Pages

NSC

国半

350 mA, Constant Current Output Floating Buck Switching Converter for High Power LEDs

文件：387.88 Kbytes 页数：16 Pages

NSC

国半