N-Channel 650 V (D-S) MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.08705 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3324 is N-Channel MOS FET device that features a Low gate charge and excellent switching characteristics, and Designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge :

文件：69.48 Kbytes 页数：8 Pages

NEC

瑞萨

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE DESCRIPTION The 2SK3326 is N-Channel DMOS FET device that features a low gate charge and excellent switching characteristics, and designed for high voltage applications such as switching power supply, AC adapter. FEATURES • Low gate charge :

文件：70.51 Kbytes 页数：8 Pages

NEC

瑞萨

Dipped Radial Multilayer Ceramic Capacitors for 50 - 100 Vdc

文件：368.78 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Multilayer Ceramic Dipped Radial Capacitors 50 VDC and 100 VDC

文件：103.98 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Multilayer Ceramic Dipped Radial Capacitors 50 VDC and 100 VDC

文件：103.98 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dipped Radial Multilayer Ceramic Capacitors for 50 - 100 Vdc

文件：368.78 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Multilayer Ceramic Dipped Radial Capacitors 50 VDC and 100 VDC

文件：103.98 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Multilayer Ceramic Dipped Radial Capacitors 50 VDC and 100 VDC

文件：103.98 Kbytes 页数：13 Pages

VISHAYVishay Siliconix

威世威世科技公司

Dipped Radial Multilayer Ceramic Capacitors for 200 - 500 Vdc

文件：285.38 Kbytes 页数：9 Pages

VISHAYVishay Siliconix

威世威世科技公司