Silicon N Channel MOS FET High Speed Power Switching

Silicon N Channel MOS FET High Speed Power Switching Features • Low on-resistance RDS =35mΩ typ. • High speed switching • 4V gate drive device can be driven from 5V source

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HITACHIHitachi Semiconductor

日立日立公司

Optoelectronic Components

文件：3.61073 Mbytes 页数：19 Pages

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今台电子

3.2x1.0mm RIGHT ANGLE SMD CHIP LED LAMP

Features 3.2mmx1.0mm right angle SMT LED, 1.5mm thickness. Low power consumption. Wide viewing angle. Ideal for backlight and indicator. Package : 2000pcs / reel. Moisture sensitivity level : level 3. Tinned pads for improved solderability. RoHS compliant. Description The Green source

文件：370.98 Kbytes 页数：5 Pages

KINGBRIGHT

今台电子

Optoelectronic Components

文件：3.61073 Mbytes 页数：19 Pages

KINGBRIGHT

今台电子