Power MOSFET

FEATURES • Low Gate Charge Qg Results in Simple Drive Requirement • Improved Gate, Avalanche and Dynamic dV/dt Ruggedness • Fully Characterized Capacitance and Avalanche Voltage and Current • Compliant to RoHS directive 2002/95/EC

文件：1.07693 Mbytes 页数：9 Pages

VBSEMI

微碧半导体

EPITAXIAL PLANAR NPN TRANSISTOR (GENERAL PURPOSE, SWITCHING)

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURE • High DC Current Gain : hFE=600 ~ 3600. • Small Package.

文件：296.88 Kbytes 页数：3 Pages

KEC

KEC(Korea Electronics)

High Efficiency Boost 2P6S/3P6S LED Driver

Features  Drive up to 6 LEDs per string  KTD3112: 2 strings, 12 LEDs total  KTD3113: 3 strings, 18 LEDs total  High efficiency: up to 90  High frequency step-up converter (800kHz)  Wide input range: 2.7V to 5.5V  Integrated 30V Power MOSFET  Internal compensation and soft start

文件：656.58 Kbytes 页数：13 Pages

KINETIC

芯凯电子

Plug-in Signal Conditioners K-UNIT

文件：143.38 Kbytes 页数：5 Pages

MSYSTEM

爱模