MITSUBISHI RF POWER MOS FET

DESCRIPTION\n2SK2975 is a MOS FET type transistor specifically designed for VHF/UHF power amplifiers applications.FEATURES\n• High power gain:Gpe³8.4dB\n   @VDD=9.6V,f=450MHz,Pin=30dBm\n• High efficiency:55% typ.\n• Source case type seramic package\n   (connected internally to source)APPLICATION • High power gain:Gpe³8.4dB\n• High efficiency:55% typ.\n• Source case type seramic package\n   (connected internally to source)APPLICATION\n   For drive stage and output stage of power amplifiers in VHF/UHF\n   band portable radio sets.;

MITSUBISHI

三菱电机

MOSFET LDO Driver/Controller

文件：715.31 Kbytes 页数：19 Pages

NSC

国半

MOSFET LDO Driver/Controller

文件：2.92546 Mbytes 页数：37 Pages

TI

德州仪器

4-Channel Power Supply System Featuring the Power System Manager with Input Energy Accumulation

文件：1.83381 Mbytes 页数：26 Pages

LINER

凌力尔特