N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Ampli

文件：236.09 Kbytes 页数：3 Pages

Fuji

富士通

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose Power Ampli

文件：236.09 Kbytes 页数：3 Pages

Fuji

富士通

N-channel MOS-FET

> Features - High Speed Switching - Low On-Resistance - No Secondary Breakdown - Low Driving Power - High Voltage - VGS= ± 30V Guarantee - Repetitive Avalanche Rated > Applications - Switching Regulators - UPS - DC-DC converters - General Purpose

文件：236.43 Kbytes 页数：3 Pages

Fuji

富士通

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)

UHF SHF TUNING. FEATURES • High Capacitance Ratio : C2V/C25V=7.6(Typ.) • Low Series Resistance : rS=1.9ή (Typ.) • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner.

文件：64.41 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)

Silicon Epitaxial Planar Diode

Features ● High Capacitance Ratio : C2V/C25V=7.6(Typ.) ● Low Series Resistance : rs=1.9 Ω(Typ.) ● Excellent C-V Characteristics, and Small Tracking Error. ● Useful for Small Size Tuner.

文件：34.3 Kbytes 页数：1 Pages

KEXIN

科信电子

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(UHF SHF TUNING)

UHF SHF TUNING. FEATURES • High Capacitance Ratio : C2V/C25V=7.6(Typ.) • Low Series Resistance : rS=1.9 Ω (Typ.) • Excellent C-V Characteristics, and Small Tracking Error. • Useful for Small Size Tuner.

文件：62.71 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)