N-CHANNEL MOS FIELD EFFECT TRANSISTOR FOR HIGH SPEED SWITCHING

DESCRIPTION\nThe 2SK2857 is a switching device which can be driven directly by a 5V power source.\nThe 2SK2857 features a low on-state resistance and excellent Switching Characteristics, and is suitable for applications such as actuator driver.FEATURES\n• Can be driven by a 5V power source.\n• Low O • Can be driven by a 5V power source.\n• Low On-state resistance :\n   RDS(on)1 = 220 mΩ MAX. (VGS = 4 V, ID = 1.5 A)\n   RDS(on)2 = 150 mΩ MAX. (VGS = 10 V, ID = 2.5 A) ;

Renesas

瑞萨

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

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KEC

KEC(Korea Electronics)

EPITAXIAL PLANAR NPN TRANSISTOR (SWITCHING, AUDIO MUTING)

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ● High emitter-base voltage : VEBO=25V(Min) ● High reverse hFE : reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ● Low on resistance : Ron=1 (Typ.) (IB=5mA) ● With Built-in Bias Resistors. ● Simplify Circuit Design. ● Reduce a Quantity of

文件：383.8 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)

USM PACKAGE

SWITCHING APPLICATION. AUDIO MUTING APPLICATION. FEATURES ·High emitter-base voltage : VEBO=25V(Min) ·High reverse hFE: reverse hFE=150(Typ.) (VCE=-2V, IC=-4mA) ·Low on resistance : Ron=1Ω(Typ.) (IB=5mA) ·With Built-in Bias Resistors. ·Simplify Circuit Design. ·Reduce a

文件：21.27 Kbytes 页数：1 Pages

KEC

KEC(Korea Electronics)