Silicon N Channel MOS FET High Speed Power Switching

1. Low on-resistance 2. High speed switching 3. Low drive current 4. No secondary breakdown 5. Suitable for switching regulator and DC–DC converter 6. Avalanche ratings

文件：45.63 Kbytes 页数：10 Pages

HITACHIHitachi Semiconductor

日立日立公司

SMD Shielded Power Inductor

Features: • Compact, low profile with low DCR and high current • Provides magnetic shielding against radiation • Flat bottom provides reliable surface mounting • Contact Stackpole for additional inductance values • 100% RoHS compliant and lead free without exemption • Halogen free • REA

文件：490.36 Kbytes 页数：7 Pages

SEI

世达柏

SMD Shielded Power Inductor

Features: • Compact, low profile with low DCR and high current • Provides magnetic shielding against radiation • Flat bottom provides reliable surface mounting • Contact Stackpole for additional inductance values • 100% RoHS compliant and lead free without exemption • Halogen free • REA

文件：490.36 Kbytes 页数：7 Pages

SEI

世达柏

SMD Shielded Power Inductor

Features: • Compact, low profile with low DCR and high current • Provides magnetic shielding against radiation • Flat bottom provides reliable surface mounting • Contact Stackpole for additional inductance values • 100% RoHS compliant and lead free without exemption • Halogen free • REA

文件：490.36 Kbytes 页数：7 Pages

SEI

世达柏