SWITCHING N-CHANNEL POWER MOS FET INDUSTRIAL USE

DESCRIPTION\nThe 2SK2512 is N-Channel MOS Field Effect Transistor designed for high current switching applications.FEATURES\n• Low On-Resistance\nRDS (on)1= 15 mΩ(VGS= 10 V, ID= 23 A)\nRDS (on)2= 23 mΩ(VGS= 4 V, ID= 23 A)\n• Low CissCiss= 2 100 pF TYP.\n• Built-in G-S Protection Diode • Low On-Resistance\nRDS (on)1= 15 mΩ(VGS= 10 V, ID= 23 A)\nRDS (on)2= 23 mΩ(VGS= 4 V, ID= 23 A)\n• Low CissCiss= 2 100 pF TYP.\n• Built-in G-S Protection Diode;

Renesas

瑞萨

丝印：K251；Package：SOT23-5；Very high accuracy (5 μV) high bandwidth (10 MHz) zero drift 5 V op amp

Features • Very high accuracy and stability: offset voltage – 5 μV max. at 25 °C – 8 μV over the full temperature range (-40 °C to 125 °C) • Rail-to-rail input and output • Low supply voltage: 2.5 - 5.5 V • Low power consumption: 1.5 mA at 5 V • Gain-bandwidth product: 10 MHz • AEC-Q100 au

文件：826.8 Kbytes 页数：15 Pages

STMICROELECTRONICS

意法半导体

Compact Industrial Box PC for Edge Gateway Applications

文件：366.05 Kbytes 页数：3 Pages

KONTRON

控创

TECHNICAL SPECIFICATIONS OF SINGLE-PHASE SILICON BRIDGE RECTIFIER

VOLTAGE RANGE - 50 to 1000 Volts CURRENT - 25 Amperes FEATURES * Metal case for Maximum Heat Dissipation * Surge overload ratings - 400 Amperes * Low forward voltage drop

文件：390.23 Kbytes 页数：2 Pages

DCCOM

道全

VARIABLE CAPACITANCE DIODE SILICON EPITAXIAL PLANAR DIODE(VCO FOR CB,C/P PLL)

VCO FOR C/P, CB PLL FEATURES • Low Series Resistance : 0.6Ω (Max.) • High Capacitance Ratio : 1.7(Min.) ~ 2.2(Max.)

文件：172.47 Kbytes 页数：2 Pages

KEC

KEC(Korea Electronics)