N CHANNEL MOS TYPE (AUDIO FREQUENCY POWER AMPLIFIER APPLICATION)

Audio Frequency Power Amplifier Application High breakdown voltage : VDSS= 180V High forward transfer admittance : |Yfs| = 0.7 S (typ.) Complementary to 2SJ313

文件：162.2 Kbytes 页数：3 Pages

TOSHIBA

东芝

PNP (SWITCHING APPLICATION)

SWITCHING APPLICATION (Bias Resistor Built In) • Switching circuit, Inverter, Interface circuit, Driver circuit • Built in bias Resistor (R1=2.2KΩ, R2=47KΩ) • Complement to KSR1013

文件：30.9 Kbytes 页数：1 Pages

SAMSUNG

三星

EPITAXIAL PLANAR PNP TRANSISTOR

GENERAL PURPOSE APPLICATION. SWITCHING APPLICATION. FEATURES • Excellent hFE Linearity : hFE(0.1mA)/hFE(2mA)=0.95(Typ.). • High hFE : hFE=120~400. • Complementary to KTC4074F. • Thin Fine Pitch Small Package.

文件：54.71 Kbytes 页数：3 Pages

KECKEC(Korea Electronics)

开益禧无锡开益禧半导体有限公司

SUBMINATURE/MULTI-FUNCTION/UNBRACKETED

文件：495.43 Kbytes 页数：10 Pages

ETCList of Unclassifed Manufacturers

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