1Mx16 bit Uni-Transistor Random Access Memory

1M x 16 bit Uni-Transistor CMOS RAM GENERAL DESCRIPTION The K1S161611A is fabricated by SAMSUNG¢s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supp

文件：179.52 Kbytes 页数：10 Pages

Samsung

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1Mx16 bit Uni-Transistor Random Access Memory

Samsung

三星

1Mx16 bit Uni-Transistor Random Access Memory

1M x 16 bit Uni-Transistor CMOS RAM GENERAL DESCRIPTION The K1S161611A is fabricated by SAMSUNG¢s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supp

文件：179.52 Kbytes 页数：10 Pages

Samsung

三星

1Mx16 bit Uni-Transistor Random Access Memory

1M x 16 bit Uni-Transistor CMOS RAM GENERAL DESCRIPTION The K1S161611A is fabricated by SAMSUNG¢s advanced CMOS technology using one transistor memory cell. The device supports Industrial temperature range and 48 ball Chip Scale Package for user flexibility of system design. The device also supp

文件：179.52 Kbytes 页数：10 Pages

Samsung

三星