Silicon N-Channel MOS FET

• Low on-resistance\n• Low drive current\n• Suitable for switchingregulator, DC-DC converterApplication\nHigh speed power switching\n ;

HITACHI

日立

TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE SWITCHING POWER SUPPLY SWITCHING FOR TELEPHONES)

HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES • High Voltage : VCEO=-600V. • High Speed Switching Time. : tf 1.0 s (IC=-0.5A) • Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) • Wide Safe Operating Area (SOA).

文件：404.06 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

TRIPLE DIFFUSED PNP TRANSISTOR(HIGH VOLTAGE SWITCHING POWER SUPPLY SWITCHING FOR TELEPHONES)

HIGH VOLTAGE SWITCHING. POWER SUPPLY SWITCHING FOR TELEPHONES. FEATURES • High Voltage : VCEO=-600V. • High Speed Switching Time. : tf 1.0 s (IC=-0.5A) • Low Collector Emitter Saturation Voltage. : VCE(sat)=-0.28V (IC=-0.3A, IB=-60mA) • Wide Safe Operating Area (SOA).

文件：404.06 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)

TRIPLE DIFFUSED PNP TRANSISTOR

文件：409.69 Kbytes 页数：4 Pages

KEC

KEC(Korea Electronics)