Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

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TOSHIBA

东芝

丝印：K15A60U；Package：SC-67；Field Effect Transistor Silicon N Channel MOS Type (DTMOS??

Switching Regulator Applications • Low drain-source ON-resistance: RDS (ON) = 0.24 Ω (typ.) • High forward transfer admittance: ⎪Yfs⎪ = 8.5 S (typ.) • Low leakage current: IDSS = 100 μA (VDS = 600 V) • Enhancement mode: Vth = 3.0 to 5.0 V (VDS = 10 V, ID = 1 mA)

文件：162.27 Kbytes 页数：6 Pages

TOSHIBA

东芝

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Using the Schottky Barrier principle with a Molybdenum barrier metal. These state-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diode

文件：235.5 Kbytes 页数：3 Pages

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