丝印：JL；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：692.73 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：JL；Package：USM；Zener Diode Silicon Epitaxial Planar

Applications (1) Voltage surge protection Features (1) Small package (2) The typical voltage of VZ is accorded to E24 series.

文件：2.048949 Mbytes 页数：28 Pages

TOSHIBA

东芝

丝印：JL；Package：SMA；400W SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR

Glass Passivated Die Construction 400W Peak Pulse Power Dissipation 5.0V – 440V Standoff Voltage Uni- and Bi-Directional Versions Available Excellent Clamping Voltage Typical Response Time

文件：111.34 Kbytes 页数：6 Pages

WTE

Won-Top Electronics

丝印：JL；Package：SOT-89；300/600mA, Ultra-Fast Transient Response LDO Regulator

General Description The RT9166/A series are CMOS low dropout regulators optimized for ultra-fast transient response. The devices are capable of supplying 300mA or 600mA of output current with a dropout voltage of 230mV or 580mV respectively. Features • Low Quiescent Current (Typically 220μA) •

文件：193.72 Kbytes 页数：15 Pages

RichTek

立锜科技

丝印：JL；SURFACE MOUNT TRANSIENT VOLTAGE SUPPESSOR DIODE

VOLTAGE RANGE: 5.0 - 440 V POWER: 400Watts Features ● Glass Passivated Die Construction ● Uni- and Bi-Directional Versions Available ● Excellent Clamping Capability ● Fast Response Time ● Plastic Material: UL Flammability Classification Rating 94V-0

文件：1.19459 Mbytes 页数：5 Pages

SUNMATE

森美特

丝印：JL；Package：DO-214AC；SURFACE MOUNT TRANSIENT VOLTAGE SUPPRESSOR DIODE

Features Glass Passivated Die Construction Uni- and Bi-Directional Versions Available Excellent Clamping Capability Fast Response Time Plastic Material: UL Flammability Classification Rating 94V-0

文件：301.26 Kbytes 页数：5 Pages

SUNMATE

森美特

丝印：JL；Package：ESV；CMOS Digital Integrated Circuits Silicon Monolithic

1. Functional Description • Schmitt Buffer 2. Features (1) AEC-Q100 (Rev. H) (Note 1) (2) Wide operating temperature range: Topr = -40 to 125  (Note 2) (3) High output current: ±24 mA (min) at VCC = 3.0 V (4) Super high speed operation: tpd = 3.7 ns (typ.) at VCC = 5.0 V, CL = 50 pF (5) Op

文件：163.43 Kbytes 页数：9 Pages

TOSHIBA

东芝

丝印：JL；Package：TO-236AB；60 V, single N-channel Trench MOSFET

文件：718.06 Kbytes 页数：16 Pages

NEXPERIANexperia B.V. All rights reserved

安世安世半导体(中国)有限公司

丝印：JL；Package：VSOF5；Low Voltage Detector IC

文件：291.61 Kbytes 页数：6 Pages

ROHM

罗姆

丝印：JL；Package：SSOP5；Low Voltage Standard CMOS Voltage Detector ICs Ultra-low current consumption

文件：405.58 Kbytes 页数：16 Pages

ROHM

罗姆