HIGH VOLTAGE RECTIFIER ASSEMBLY

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MICROSEMI

美高森美

ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL

Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a

文件：292.11 Kbytes 页数：12 Pages

RFMD

威讯联合

ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL

Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a

文件：292.11 Kbytes 页数：12 Pages

RFMD

威讯联合

ISM BAND 3.6V, 250MW AMP WITH ANALOG GAIN CONTROL

Product Description The RF2172 is a medium-power high efficiency amplifier IC targeting 3.6V handheld systems. The device is manufactured on an advanced Gallium Arsenide Heterojunction Bipolar Transistor (HBT) process, and has been designed for use as the final RF amplifier in 2.45GHz Bluetooth a

文件：292.11 Kbytes 页数：12 Pages

RFMD

威讯联合