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MBR830

SchottkyBarrierRectifiers

VOLTAGERANGE:30-100VCURRENT:8.0A Features ◇Highsurgecapacity. ◇Foruseinlowvoltage,highfrequencyinverters,freewheeling,andpolarityprotectionapplications. ◇Metalsiliconjunction,majoritycarrierconduction. ◇Highcurrentcapacity,lowforwardvoltagedrop. ◇Thepl

LUGUANGShenzhen Luguang Electronic Technology Co., Ltd

鲁光电子深圳市鲁光电子科技有限公司

MBR830

SCHOTTKYBARRIERRECTIFIER

ReverseVoltage-20to100VoltsForwardCurrent-8.0Amperes FEATURES ♦TheplasticpackagecarriesUnderwritersLaboratory FlammabilityClassification94V-0 ♦Constructionutilizesvoid-freemoldedplastictechnique ♦Lowreverseleakage ♦Highforwardsurgecurrentcapability ♦High

CHENDAMicrodiode Electronics (Jiangsu) Co.,Ltd.

辰达半导体深圳辰达半导体有限公司

MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

GuardRingDieConstructionforTransientProtection

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

HighTjmLowIRRMSchottkyBarrierDiodes

SIRECTIFIERSirectifier Semiconductors

矽莱克电子江苏矽莱克电子科技有限公司

MBR830

SchottkyBarrierChip

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

8.0ASCHOTTKYBARRIERRECTIFIER

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

GuardRingDieConstructionforTransientProtection

Features ●SchottkyBarrierChip ●GuardRingDieConstructionfor TransientProtection ●LowPowerLoss,HighEfficiency ●HighSurgeCapability ●HighCurrentCapabilityandLowForward VoltageDrop ●ForUseinLowVoltage,HighFrequency Inverters,FreeWheeling,andPolarity

KERSEMI

Kersemi Electronic Co., Ltd.

MBR830

SCHOTTKYBARRIERRECTIFIER

DSK

Diode Semiconductor Korea

MBR830

SCHOTTKYBARRIERRECTIFIERS

HY

HY ELECTRONIC CORP.

详细参数

  • 型号:

    JCS830R

  • 制造商:

    JSMC

  • 制造商全称:

    JILIN SINO-MICROELECTRONICS CO., LTD.

  • 功能描述:

    N-CHANNEL MOSFET

供应商型号品牌批号封装库存备注价格
SINO-MICRO
2022+
TO-252
50000
原厂代理 终端免费提供样品
询价
J
23+
DPAK
6000
原装正品,支持实单
询价
SINO-MICRO
2022+
TO-252
30000
进口原装现货供应,原装 假一罚十
询价
J
25+
DPAK
12300
独立分销商 公司只做原装 诚心经营 免费试样正品保证
询价
SINO-MICRO
23+
TO-263
79999
原厂授权一级代理,专业海外优势订货,价格优势、品种
询价
华微
24+
TO-262
9000
只做原装正品 有挂有货 假一赔十
询价
VBSEMI/台湾微碧
23+
TO220
50000
全新原装正品现货,支持订货
询价
VBSEMI/台湾微碧
24+
TO220
60000
询价
SINO-MICRO
20+
TO-220
32500
现货很近!原厂很远!只做原装
询价
吉林华微
23+
TO-220MF
89630
当天发货全新原装现货
询价
更多JCS830R供应商 更新时间2025-7-16 14:02:00