丝印：JCS7N80FH；Package：TO-220MF；Electronic ballast

文件：961.4 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Electronic ballast

文件：961.4 Kbytes 页数：9 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

N CHANNEL MOS FIELD

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=800V, ID

文件：403.07 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)

800V N-CHANNEL MOSFET

文件：1.87991 Mbytes 页数：6 Pages

KERSEMI