场效应晶体管/MOSFET-600V-700V系列

JSMC

华微电子

丝印：JCS1N60V；Package：IPAK；N-CHANNEL MOSFET

文件：714.23 Kbytes 页数：11 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

TRIAC (Silicon Bidirectional Thyristor)

文件：300.13 Kbytes 页数：7 Pages

Fairchild

仙童半导体

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS= 600V, ID= 1A • RDS(ON)=10Ω (Max) @VGS = 1

文件：614.39 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for switching mode power supplies. FEATURES • VDSS= 600V, ID= 1A • RDS(ON)=10Ω (Max) @VGS = 1

文件：923.42 Kbytes 页数：6 Pages

KEC

KEC(Korea Electronics)