首页 >JCS1N60R-O-R-N-B>规格书列表
| 零件编号 | 下载 订购 | 功能描述/丝印 | 制造商 上传企业 | LOGO |
|---|---|---|---|---|
TMOSPOWERFET1.0AMPERE600VOLTSRDS(on)=8.0OHM TMOSE-FET™PowerFieldEffectTransistor DPAKforSurfaceMount N-ChannelEnhancement-ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.InadditionthisadvancedTMOSE | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent–ID=1A@TC=25℃ ·DrainSourceVoltage- :VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance :RDS(on)=8Ω(Max)@VGS=10V ·100avalanchetested ·MinimumLot-to-Lotvariationsforrobustdevice performanceandreliableoperation DESCRIPTION ·motordrive,DC-DCconve | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
PowerFieldEffectTransisterN-ChannelEnhancementModeSiliconGate PowerFieldEffectTransistor N-ChannelEnhancement-ModeSiliconGate ThisTMOSPowerFETisdesignedforhighvoltage,highspeedpowerswitchingapplicationssuchasswitchingregulators,converters,solenoidandrelaydrivers. •SiliconGateforFastSwitchingSpeeds—SwitchingTimesSpecif | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
N-ChannelMosfetTransistor •DESCRITION •Designedforhighefficiencyswitchmodepowersupply. •FEATURES •DrainCurrent-ID=1A@TC=25°C •DrainSourceVoltage-:VDSS=600V(Min) •StaticDrain-SourceOn-Resistance:RDS(on)=8Ω(Max) •AvalancheEnergySpecified •FastSwitching •SimpleDriveRequirements | NJSEMINew Jersey Semi-Conductor Products, Inc. 新泽西半导体新泽西半导体产品股份有限公司 | NJSEMI | ||
iscN-ChannelMOSFETTransistor FEATURES ·DrainCurrent-ID=1A@TC=25℃ ·DrainSourceVoltage-VDSS=600V(Min) ·StaticDrain-SourceOn-Resistance -RDS(on)=12Ω(Max)@VGS=10V DESCRIPTION ·Motordrive,DC-DCconverter,powerswitch andsolenoiddrive. | ISCInchange Semiconductor Company Limited 无锡固电无锡固电半导体股份有限公司 | ISC | ||
TMOSPOWERFET1.0AMPERES600VOLTSRDS(on)=8.0OHM TMOSE-FETPowerFieldEffectTransistor N–ChannelEnhancement–ModeSiliconGate ThishighvoltageMOSFETusesanadvancedterminationschemetoprovideenhancedvoltage–blockingcapabilitywithoutdegradingperformanceovertime.Inaddition,thisadvancedTMOSE–FETisdesignedtowithstandhi | MotorolaMotorola, Inc 摩托罗拉加尔文制造公司 | Motorola | ||
N?묬hannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelPowerMOSFET | ONSEMION Semiconductor 安森美半导体安森美半导体公司 | ONSEMI | ||
N-ChannelMOSFET | KEXINGuangdong Kexin Industrial Co.,Ltd 科信电子广东科信实业有限公司 | KEXIN |
| 供应商 | 型号 | 品牌 | 批号 | 封装 | 库存 | 备注 | 价格 |
|---|---|---|---|---|---|---|---|
Sino-Micr |
21+ |
TO-252 |
10000 |
原装现货假一罚十 |
询价 | ||
SINO-MICRO |
2022+ |
TO-252 |
32500 |
原厂代理 终端免费提供样品 |
询价 | ||
23+ |
TO-252 |
43231 |
原厂授权一级代理,专业海外优势订货,价格优势、品种 |
询价 | |||
S |
23+ |
TO-252 |
6000 |
原装正品，支持实单 |
询价 | ||
SINO-MICRO |
2022+ |
TO-252 |
30000 |
进口原装现货供应,原装 假一罚十 |
询价 | ||
Sino-Micr |
23+ |
TO-252 |
8000 |
只做原装现货 |
询价 | ||
Sino-Micr |
23+ |
TO-252 |
7000 |
询价 | |||
HP |
1816+ |
TO-126 |
6523 |
科恒伟业!只做原装正品,假一赔十! |
询价 | ||
HP |
22+ |
TO-126 |
8900 |
英瑞芯只做原装正品!!! |
询价 | ||
吉林华微 |
23+ |
TO-IPAK |
89630 |
当天发货全新原装现货 |
询价 |
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