N-CHANNEL MOSFET

FEATURES Low gate charge Low Crss (typical 20pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS

文件：1.05609 Mbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

N-CHANNEL MOSFET

FEATURES Low gate charge Low Crss (typical 20pF ) Fast switching 100 avalanche tested Improved dv/dt capability RoHS product APPLICATIONS High efficiency switch mode power supplies Electronic lamp ballasts based on half bridge UPS

文件：1.05609 Mbytes 页数：10 Pages

JSMCJILIN SINO-MICROELECTRONICS CO., LTD.

华微电子吉林华微电子股份有限公司

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode

Fast IGBT in NPT-technology with soft, fast recovery anti-parallel Emitter Controlled Diode ● 75 lower Eoff compared to previous generation combined with low conduction losses ● Short circuit withstand time – 10 μs ● Designed for:    - Motor controls    - Inverter ● NPT-Technology for 600V a

文件：438.56 Kbytes 页数：14 Pages

Infineon

英飞凌

N CHANNEL MOS FIELD EFFECT TRANSISTOR

General Description This planar stripe MOSFET has better characteristics, such as fast switching time, low on resistance, low gate charge and excellent avalanche characteristics. It is mainly suitable for active power factor correction and switching mode power supplies. FEATURES • VDSS=600V, ID

文件：83.22 Kbytes 页数：7 Pages

KEC

KEC(Korea Electronics)