JANTXV2N930数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This 2N930, high-frequency, epitaxial planar transistor, features low saturation voltage and is military qualified to the JANS level for high-reliability applications. This device is available in a TO-206AA (TO-18) package and surfacemount UB.

特性 Features

JEDEC registered 2N930
JANHC, JANKC, JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/253
RoHS compliant versions available (commercial grade only)
General purpose transistors for medium power applications requiring high frequency switching
Available in TO-206AA (TO-18) and low profile, surfacemount UB package
Military and other high-reliability applications.

简介

JANTXV2N930属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的JANTXV2N930晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。