JANTXV2N3057A中文资料Transistor GP BJT NPN 3-Pin 80V, 1A, 500mW TO-46 Bag数据手册Microchip规格书

描述 Description

This 2N3057A leaded silicon NPN transistor device is military qualified up to the JANS level for high-reliability applications. This transistor is available in a TO-206AB (TO-46) package. Microchip also offers numerous other transistor products to meet higher and lower power ratings with various switching speed requirements in both through-hole and surface-mount packages.

特性 Features

JEDEC registered 2N3019 number
JAN, JANTX, JANTXV and JANS qualifications are available per MIL-PRF-19500/391
Rad hard levels are also available per MIL-PRF-19500/391
(For RHA datasheet see JANSD2N3019.) RoHS compliant by design
Long leaded TO-205AA (TO-5) package
Lightweight
Low power
Military and other high-reliability applications.

简介

JANTXV2N3057A属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由Microchip制造生产的JANTXV2N3057A晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。