NPN Silicon Switching 30V to 50V, 0.8A

This specification covers the performance requirements for NPN, silicon, switching, 2N2218 and 2N2219 transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each device type as specified in MIL-PRF-19500/251. RHA level designators “M”, “D”, “P“, “L”, “R”, “F”, “ The device packages for the encapsulated device types are as follows: TO-39 and TO-5.;

Microchip

微芯科技

Package：TO-205AA，TO-5-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：SMALL-SIGNAL BJT

Microchip

微芯科技

Bipolar NPN Device in a Hermetically sealed TO39 Metal Package

文件：11.12 Kbytes 页数：1 Pages

SEME-LAB

NPN switching transistors

DESCRIPTION NPN switching transistor in a TO-39 metal package. PNP complement: 2N2905 and 2N2905A. FEATURES • High current (max. 800 mA) • Low voltage (max. 40 V). APPLICATIONS • High-speed switching • DC and VHF/UHF amplification, for 2N2219 only.

文件：55.85 Kbytes 页数：8 Pages

PHI

飞利浦

HIGH-SPEED SWITCHES

DESCRIPTION The 2N2218, 2N2219, 2N2221 and 2N2222 are silicon planar epitaxial NPN transistors in Jedec TO-39 (for 2N2218 and 2N2219) and in Jedec TO-18 (for 2N2221 and 2N2222) metal cases. They are designed for high-speed switching applications at collector currents up to 500 mA, and feature use

文件：71.73 Kbytes 页数：5 Pages

STMICROELECTRONICS

意法半导体

Chip Type 2C2222A Geometry 0400 Polarity NPN

Chip type 2C2222A by Semicoa Semiconductors provides performance similar to these devices. Product Summary: APPLICATIONS: Designed for general purpose switching and amplifier applica tions.

文件：29.63 Kbytes 页数：1 Pages

Semicoa