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JANTXV1N6631US中文资料Rectifier Diode Switching 2-Pin 1KV, 1.4A, 80ns E-MELF Bag数据手册Microchip规格书

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厂商型号

JANTXV1N6631US

参数属性

JANTXV1N6631US 封装/外壳为E-MELF;包装为卷带(TR);类别为分立半导体产品的二极管-整流器-单;产品描述:DIODE GEN PURP 1.1KV 1.4A D5B

功能描述

Rectifier Diode Switching 2-Pin 1KV, 1.4A, 80ns E-MELF Bag
DIODE GEN PURP 1.1KV 1.4A D5B

封装外壳

E-MELF

制造商

Microchip Microchip Technology

中文名称

微芯科技 美国微芯科技公司

数据手册

下载地址下载地址二

更新时间

2025-9-24 11:10:00

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JANTXV1N6631US规格书详情

描述 Description

This “Ultrafast Recovery” rectifier diode series is military qualified to MIL-PRF19500/590 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 2.0 to 4.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidlessglass construction using an internal “Category I” metallurgical bond. These devices are also available in axial-leaded packages for thrUS-hole mounting (see separate data sheet for 1N6626 thru 1N6631). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including standard, fast and ultrafast device types in both through-hole and surface mount packages.

特性 Features

Surface mount series equivalent to the JEDEC registered 1N6626 to 1N6631 series
Void less hermetically sealed glass package
Extremely robust construction
Triple-layer passivation
Internal “Category I” Metallurgical bonds
JAN, JANTX, and JANTXV available per MIL-PRF19500/590
Further options for screening in accordance with MILPRF-19500 for JANS by using a “SP” prefix, e
g
SP6626US, SP6629US, etc
Axial-leaded equivalents also available (see separate data sheet for 1N6626 thru 1N6631)
Ultrafast recovery rectifier series 200 to 1000V
Military and other high-reliability applications
Switching power supplies or other applications requiring extremely fast switching & low forward loss
High forward surge current capability
Low thermal resistance
Controlled avalanche with peak reverse power capability
Inherently radiation hard as described in Microchip MicroNote 050

简介

JANTXV1N6631US属于分立半导体产品的二极管-整流器-单。由制造生产的JANTXV1N6631US二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动,并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管(包括齐纳二极管和可变电容二极管)单独列在各自的产品系列中,每个器件封装中包含多个二极管的产品也是如此。

技术参数

更多
  • 产品编号:

    JANTXV1N6631US

  • 制造商:

    Microchip Technology

  • 类别:

    分立半导体产品 > 二极管 - 整流器 - 单

  • 系列:

    Military, MIL-PRF-19500/590

  • 包装:

    卷带(TR)

  • 二极管类型:

    标准

  • 电流 - 平均整流 (Io):

    1.4A

  • 速度:

    快速恢复 =< 500ns,> 200mA(Io)

  • 不同 Vr、F 时电容:

    40pF @ 10V,1MHz

  • 安装类型:

    表面贴装型

  • 封装/外壳:

    E-MELF

  • 供应商器件封装:

    D-5B

  • 工作温度 - 结:

    -65°C ~ 150°C

  • 描述:

    DIODE GEN PURP 1.1KV 1.4A D5B

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