JANTX2N7373数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This specification covers the performance requirements for NPN, silicon, power, 2N7373 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided as specified in MIL-PRF-19500/613. Provisions for radiation hardness assurance (RHA) to eight radiation levels is provided for JANS product assurance level. RHA level designators M, D, P, L, R, F, G, and H are appended to the device prefix to identify devices, which have passed RHA requirements.

特性 Features

The device package for the encapsulated device type are as follows: Three terminal round metal can modified TO-254AA (T1).

简介

JANTX2N7373属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的JANTX2N7373晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。