NPN Silicon Power Switching 70V to 120V, 10A

This specification covers the performance requirements for NPN, silicon, low-power, high voltage radiation hardened 2N4150, 2N5237 and 2N5238 transistors. Four levels of product assurance (JAN, JANTX, JANTXV, and JANS) are provided for each encapsulated device type as specified in MIL-PRF-19500/394. The device package outlines are as follows: TO-5 and surfacemount U3 for all encapsulated device types. \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/394.;

Microchip

微芯科技

Package：TO-205AA，TO-5-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：POWER BJT

Microchip

微芯科技

Type 2N4150 Geometry 9201 Polarity NPN

Chip type 2C5154 by Semicoa Semiconductors provides performance similar to these devices. Features: ● Medium power ratings APPLICATIONS: Designed for medium power amplifier and switching and wide band amplifier applications.

文件：47.85 Kbytes 页数：2 Pages

Semicoa

Chip Type 2C5154 Geometry 9201 Polarity NPN

文件：33.57 Kbytes 页数：1 Pages

Semicoa

NPN POWER SILICON TRANSISTOR

NPN POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/394

文件：63.3 Kbytes 页数：2 Pages

Microsemi

美高森美