PNP Silicon Amplifier -140V, -1A

This specification covers the performance requirements for PNP, silicon, radiation hardened, low-power amplifier, and switching 2N3634 through 2N3637 transistors. Four levels of product assurance are provided for each encapsulated device (JAN, JANTX, JANTXV and JANS) as specified in MIL-PRF-19500/35 The device package for the encapsulated device type are as follows: TO-5 and TO-39 and surface mount. \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/357.;

Microchip

微芯科技

Package：3-SMD，无引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 140V 1A 3SMD

Microchip

微芯科技

Package：3-SMD，无引线；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 140V 1A 3SMD

Microchip

微芯科技

PNP SILICON AMPLIFIER TRANSISTOR

PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357

文件：57.89 Kbytes 页数：2 Pages

Microsemi

美高森美

PNP SILICON AMPLIFIER TRANSISTOR

PNP SILICON SWITCHING TRANSISTOR Qualified per MIL-PRF-19500/357

文件：57.89 Kbytes 页数：2 Pages

Microsemi

美高森美