NPN Silicon High-Power 250V to 300V, 2A

This specification covers the performance requirements for NPN, silicon, power, 2N3584 and 2N3585 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for this device type as specified in MIL-PRF-19500/384. The device package for the encapsulated device type are as fol

Microchip

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NPN HIGH POWER SILICON TRANSISTOR

文件：65.319 Kbytes 页数：2 Pages

MICROSEMI

美高森美

Package：TO-213AA，TO-66-2；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS NPN 300V 2A TO66

MICROCHIP

微芯科技

NPN Silicon High-Power 250V to 300V, 2A

This specification covers the performance requirements for NPN, silicon, power, 2N3584 and 2N3585 transistors. Three levels of product assurance (JAN, JANTX and JANTXV) are provided for this device type as specified in MIL-PRF-19500/384. The device package for the encapsulated device type are as follows: (TO-66).;

Microchip

微芯科技