PNP Silicon Low-Power -60V, -0.03A

This specification covers the performance requirements for PNP, silicon, low-power 2N2604 and 2N2605 transistors for use in low noise level amplifier applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type MIL-PRF-19500/354 and two The device package outlines are as follows: TO-46 in accordance with figure 1, UB suffix in accordance with figure 2 for all encapsulated device types. \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/354.;

Microchip

微芯科技

Package：TO-206AB，TO-46-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 0.03A TO46

MICROCHIP

微芯科技

PNP Silicon Low-Power -60V, -0.03A

This specification covers the performance requirements for PNP, silicon, low-power 2N2604 and 2N2605 transistors for use in low noise level amplifier applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device type MIL-PRF-19500/354 and two The device package outlines are as follows: TO-46 in accordance with figure 1, UB suffix in accordance with figure 2 for all encapsulated device types. \nThe dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/354.;

Microchip

微芯科技

Package：4-SMD，无引线；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 0.03A UB

MICROCHIP

微芯科技

Package：4-SMD，无引线；包装：卷带（TR） 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：TRANS PNP 60V 0.03A UB

MICROCHIP

微芯科技