JANTX1N5554

This specification covers the performance requirements for silicon, general purpose,

[AMSC] Scope. Thisspecificationcoverstheperformancerequirementsforsilicon,generalpurpose,semiconductordiodes.FourlevelsofproductassuranceareprovidedforeachencapsulateddevicetypeasspecifiedinMIL-PRF-19500.Twolevelsofproductassuranceareprovidedforeachunencaps

JANTX1N5554

包装：卷带（TR） 封装/外壳：轴向 类别：分立半导体产品 二极管 - 整流器 - 单 描述：D MET 3A STD 1KV HR

JANTX1N5554

包装：卷带（TR）剪切带（CT）Digi-Reel® 得捷定制卷带 封装/外壳：B，轴向 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 1KV 5A AXIAL

JANTX1N5554US

包装：散装 封装/外壳：SQ-MELF，B 类别：分立半导体产品 二极管 - 整流器 - 单 描述：ZENER DIODE

1N5554

RECTIFIERS

FEATURES •Voidlesshermeticallysealedglasspackage. •Triplelayerpassivation. •Metallurgicalbonded. •JAN/TX/TXVavailableperMIL-PRF-19500/420.

1N5554

Thisspecificationcoverstheperformancerequirementsforsilicon,generalpurpose,

[AMSC] Scope. Thisspecificationcoverstheperformancerequirementsforsilicon,generalpurpose,semiconductordiodes.FourlevelsofproductassuranceareprovidedforeachencapsulateddevicetypeasspecifiedinMIL-PRF-19500.Twolevelsofproductassuranceareprovidedforeachunencaps

1N5554

HIGHCURRENTAXIALLEADRECTIFIERS:200-1000VOLT,3.0AMP,2000NANOSECONDRECTIFIER

DESCRIPTION:200-1000VOLT,3.0AMP,2000NANOSECONDRECTIFIER

1N5554

AxialLeadedHermeticallySealedStandardRecoveryRectifierDiode

Description Quickreferencedata VR=200-1000V IF=5.0A trr=2µS VF=1.0V Features ◆Lowreverseleakagecurrent ◆Hermeticallysealedinfusedmetaloxide ◆Goodthermalshockresistance ◆Lowforwardvoltagedrop ◆Avalanchecapability Theseproductsarequalifi

1N5554

AxialLeadedHermeticallySealedStandardRecoveryRectifierDiode

1N5554

SINTEREDGLASSJUNCTIONRECTIFIERVOLTAGE:1000VCURRENT:3.0A

FEATURE Hightemperaturemetallurgicallybondedconstruction Sinteredglasscavityfreejunction CapabilityofmeetingenvironmentalstandardofMIL-S-19500 Hightemperaturesolderingguaranteed 350°C/10sec/0.375”leadlengthat5lbstension OperateatTa=55°Cwith

1N5554

HIGHCURRENTAXIALLEADRECTIFIERS

1N5554

SpiceModel

SpiceModel

1N5554

RECTIFIERS

FEATURES •Voidlesshermeticallysealedglasspackage. •Triplelayerpassivation. •Metallurgicalbonded. •JAN/TX/TXVavailableperMIL-PRF-19500/420.

1N5554

GLASSPASSIVATEDSILICONRECTIFIERS

DESCRIPTION: TheCENTRALSEMICONDUCTOR1N5550seriestypesaresiliconrectifiersmountedinahermeticallysealed,glasspassivatedpackagedesignedforgeneralpurposeapplicationswherehighreliabilityisrequired. MARKING:FULLPARTNUMBER

1N5554

VOIDLESSHERMETICALLYSEALEDSTANDARDRECOVERYGLASSRECTIFIERS

DESCRIPTION This“standardrecovery”rectifierdiodeseriesismilitaryqualifiedandisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized5.0ampratedrectifiersforworkingpeakreversevoltagesfrom200to1000voltsarehermeticallysealed

1N5554

STANDARDRECOVERYGLASSRECTIFIERS

STANDARDRECOVERYGLASSRECTIFIERS AvailableNon-RoHS(standard)orRoHScompliant(addPBFsuffix). Availableas“HR”(highreliability)screenedperMIL-PRF-19500,JANTXlevel.Add“HR”suffixtobasepartnumber.

1N5554US

SurfaceMountHermeticallySealedStandardRecoveryRectifierDiode

Description Quickreferencedata VR=200-1000V IF=5.0A trr=2µS VF=1.0V Features ◆Lowreverseleakagecurrent ◆Hermeticallysealedinfusedmetaloxide ◆Goodthermalshockresistance ◆Lowforwardvoltagedrop ◆Avalanchecapability Theseproductsarequalifiedt

1N5554US

VOIDLESSHERMITICALLYSEALEDSURFACEMOUNTSTANDARDRECOVERYGLASSRECTIFIERS

DESCRIPTION This“standardrecovery”surfacemountrectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/420andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized5.0Ampratedrectifiersforworkingpeakreversevoltagesfrom200to

1N5554US

HIGHCURRENTAXIALLEADRECTIFIERS

1N5554US

HIGHCURRENTAXIALLEADRECTIFIERS:200-1000VOLT,3.0AMP,2000NANOSECONDRECTIFIER

DESCRIPTION:200-1000VOLT,3.0AMP,2000NANOSECONDRECTIFIER