Enhanced N-Channel Radiation-Hardened 250V 12.4A MOSFET

Microchip’s new M6 technology has been developed to provide extreme reliability and enhanced radiation hardness for hermetic Power MOSFETs targeted for space and military applications. Microchip Rad-Hard MOSFETs feature low RDS(on) and low total gate charge. The devices have been developed for Total • Low RDS(on)\n• Fast switching\n• Single-event hardened\n• Low gate charge\n• Simple drive\n• Ease of paralleling\n• Hermetically sealed\n• Surface-mount design\n• Ceramic package\n• Light Weight;

Microchip

微芯科技

JANSR2N7593U3 M6 Technology (746)

文件：5.09263 Mbytes 页数：17 Pages

Microchip

微芯科技

包装：管件 类别：分立半导体产品 晶体管 - FET，MOSFET - 单个 描述：RH MOSFET _ U3

Microchip

微芯科技

MICROSEMI/美高森美
DO-35

MICROSEMI/美高森美

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MICROSEMI
SSOP

Microsemi

美高森美

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