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JANSR2N7583U2A中文资料IRF数据手册PDF规格书
JANSR2N7583U2A规格书详情
特性 Features
Single event effect (SEE) hardened
(up to LET of 90 MeV·cm2/mg)
Low RDS(on)
Low total gate charge
Simple drive requirements
Hermetically sealed
Ceramic package
Light weight
Surface mount
ESD rating: Class 3A per MIL-STD-750, Method 1020
Potential Applications
DC-DC converter
Motor drives
Electric propulsion
描述 Description
IR HiRel R6 technology provides high performance power MOSFETs for space applications. These devices have
been characterized for both Total Dose and Single Event Effect (SEE) with useful performance up to LET of
90 MeV·cm2/mg. The combination of low RDS(on) and low gate charge reduces the power losses in switching
applications such as DC-DC converters and motor controllers. These devices retain all of the well-established
advantages of MOSFETs such as voltage control, fast switching and temperature stability of electrical
parameters.