8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET

Description The Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (S

文件：39.17 Kbytes 页数：7 Pages

INTERSIL

8A, 100V, 0.180 Ohm, Rad Hard, N-Channel Power MOSFET

Description\nThe Intersil Corporation,has designed a series of SECOND GENERATION hardened power MOSFETs of both N-Chan nel and P-Channel enhancement types with ratings from 100V to 500V, 1A to 60A, and on resistance as low as 25mΩ. Total dose hardness is offered at 100K RAD (Si) and 1000K RAD (Si) w • 8A, 100V, rDS(ON) = 0.180Ω\n• Dose Rate\n• Photo Current\n• Neutron\n- Maintain Pre-RAD Specifications for 3E13 Neutrons/cm2\n- Usable to 3E14 Neutrons/cm2;

Renesas

瑞萨

SOP

IR

国际整流器

上传：深圳市东来宝电子科技有限公司

SSOP

MICROSEMI

美高森美

上传：深圳市莱克讯科技有限公司

DO-35

MICROSEMI/美高森美

上传：深圳市瑞祥辉半导体有限公司