Radiation Hardened Power MOSFET Surface-Mount (SupIR-SMD™) -200V, -62A, P-channel, R9 Superjunction Technology

Features • Single event effect (SEE) hardened (up to LET of 90.5 MeV·cm2/mg) • Low RDS(on) • Improved SOA for linear mode operation • Fast switching • Low total gate charge • Simple drive requirements • Hermetically sealed • Electrically isolated • Light weight ESD rating: Class 3B per

文件：440.68 Kbytes 页数：14 Pages

IRF

P-channel rad hard power MOSFETs

• Single event effect (SEE) hardened (up to LET of 90.5 MeV·cm2 /mg)\n• Low RDS(on)\n• Improved SOA for linear mode operation\n• Fast switching\n• Low total gate charge\n• Simple drive requirements\n• Hermetically sealed\n• Electrically isolated\n• Light Weight\n• ESD rating: Class 3B per MIL-STD-75;

Infineon

英飞凌

Radiation Hardened Power MOSFET Surface-Mount (SupIR-SMD™) -200V, -62A, P-channel, R9 Superjunction Technology

Features • Single event effect (SEE) hardened (up to LET of 90.5 MeV·cm2/mg) • Low RDS(on) • Improved SOA for linear mode operation • Fast switching • Low total gate charge • Simple drive requirements • Hermetically sealed • Electrically isolated • Light weight ESD rating: Class 3B per

文件：440.68 Kbytes 页数：14 Pages

IRF

SOP

IR

国际整流器

上传：深圳市东来宝电子科技有限公司

SSOP

MICROSEMI

美高森美

上传：深圳市莱克讯科技有限公司