Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction Technology

Features • Single event effect (SEE) hardened (up to LET of 90.5 MeV·cm2/mg) • Low RDS(on) • Improved SOA for linear mode operation • Fast switching • Low total gate charge • Simple drive requirements • Hermetically sealed • Electrically isolated • Ceramic eyelets • Light weight • ESD

文件：525.01 Kbytes 页数：14 Pages

INFINEON

英飞凌

P-channel rad hard power MOSFETs

• Single event effect (SEE) hardened\n• Improved SOA for linear mode operation\n• Low total gate charge\n• Hermetically sealed\n• Ceramic eyelets\n• Surface mount\n• DC-DC converter\n• Protection circuits\n• Latching current limiter;

Infineon

英飞凌

Radiation Hardened Power MOSFET Thru-Hole (TO-254AA Low Ohmic) -200V, -45A, P-channel, R9 Superjunction Technology

Features • Single event effect (SEE) hardened (up to LET of 90.5 MeV·cm2/mg) • Low RDS(on) • Improved SOA for linear mode operation • Fast switching • Low total gate charge • Simple drive requirements • Hermetically sealed • Electrically isolated • Ceramic eyelets • Light weight • ESD

文件：525.01 Kbytes 页数：14 Pages

INFINEON

英飞凌

SOP

IR

国际整流器

上传：深圳市东来宝电子科技有限公司

SSOP

MICROSEMI

美高森美

上传：深圳市莱克讯科技有限公司