JANS1N4116C

SILICON 400mA LOW NOISE ZENER DIODES

•1N4099UR-1THRU1N4135UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/435 •LEADLESSPACKAGEFORSURFACEMOUNT •LOWCURRENTOPERATIONAT250µA •METALLURGICALLYBONDED MAXIMUMRATINGS JunctionandStorageTemperature:-65°Cto+175°C DCPowerDissipation:50

JANS1N4116CUR-1

SILICON 400mA LOW NOISE ZENER DIODES

•1N4099UR-1THRU1N4135UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/435 •LEADLESSPACKAGEFORSURFACEMOUNT •LOWCURRENTOPERATIONAT250µA •METALLURGICALLYBONDED MAXIMUMRATINGS JunctionandStorageTemperature:-65°Cto+175°C DCPowerDissipation:50

JANS1N4116C-1/TR

包装：卷带（TR） 封装/外壳：DO-204AH，DO-35，轴向 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：VOLTAGE REGULATOR

JANS1N4116CUR-1

包装：散装 封装/外壳：DO-213AA（玻璃） 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：ZENER DIODE

JANS1N4116CUR-1/TR

包装：散装 封装/外壳：DO-213AA（玻璃） 类别：分立半导体产品 二极管 - 齐纳 - 单 描述：VOLTAGE REGULATOR

1N4116

LOWCURRENTOPERATIONAT250uA

•1N4099-1THRU1N4135-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/435 •LOWCURRENTOPERATIONAT250µA •LOWREVERSELEAKAGEANDLOWNOISECHARACTERISTICS •METALLURGICALLYBONDED

1N4116

LOWLEVELZENERDIODESLOWCURRENT:250關A-LOWNOISE

1.PackageStyleDO-7 2.Vztolerance:±5 3.ForwardVoltage(VF)Maximum1.0Vdc (1N4614–1N4627IF=100mA;1N4099–1N4121IF=200mA) 4.NoiseDensitymeasuredfrom1000to3000Hz. 5.MILITARYSCREENINGAVAILABLE

1N4116

LOWREVERSELEAKAGEANDLOWNOISECHARACTERISTICS

1N4116

500mWLOWNOISESILIONZENERDIODES

VOLTAGERANGE1.8to100Volts FEATURES *Zenervoltage1.8to100V *Lownoise *Lowreverseleakage

1N4116

500mWLowNoiseZenerDiodes

Features •LowCurrentOperationat250µA •LowReverseLeakage •LowNoiseCharacteristics •MetallurgicallyBonded •Hightemperaturesolderingguaranteed:260˚C/10seconds •RoHSCompliant

1N4116

SILICONPLANARLOWNOISEZENERDIODES

FEATURES •Lownoise •Lowreverseleakage

1N4116

400MILLIWATTHERMETICALLYSEALEDGLASSSILICONZENERDIODES

400MILLIWATTHERMETICALLYSEALEDGLASSSILICONZENERDIODES

1N4116

SILICON400mALOWNOISEZENERDIODES

•1N4099UR-1THRU1N4135UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/435 •LEADLESSPACKAGEFORSURFACEMOUNT •LOWCURRENTOPERATIONAT250µA •METALLURGICALLYBONDED MAXIMUMRATINGS JunctionandStorageTemperature:-65°Cto+175°C DCPowerDissipation:50

1N4116

SILICON500mALOWNOISEZENERDIODES

•1N4099UR-1THRU1N4135UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/435 •LEADLESSPACKAGEFORSURFACEMOUNT •LOWCURRENTOPERATIONAT250µA •METALLURGICALLYBONDED MAXIMUMRATINGS JunctionandStorageTemperature:-65°Cto+175°C DCPowerDissipation:50

1N4116

500mWSiliconZenerDiodes

Features •ZenerVoltageRange=1.8Vto47V •DoubleSlugTypeConstruction •MetallurgicalBondedConstruction •LeadFreeFinish/RohsCompliant(Note1)(PSuffixdesignatesCompliant.Seeorderinginformation) •MoistureSensitivity:Level1

1N4116

500mWSiliconZenerDiodes

1N4116

SILICON500mW

MAXIMUMRATINGS JunctionandStorageTemperatures:-65°Cto+200°C DCPowerDissipation:500mW PowerDerating:4.0mW/°Cabove50°CinDO-35 ForwardVoltage@200mA:1.1Volts1N4099-1N4135 @100mA:1.0Volts1N4614-1N4627

1N4116

Consolidatedshippingoptions

DESCRIPTION: TheCENTRALSEMICONDUCTOR1N4099seriessiliconZenerdiodeisdesignedforlowleakage,lowcurrent,andlownoiseapplications. MAXIMUMRATINGS:(TA=25°C)SYMBOLUNITS PowerDissipationPD250mW

1N4116C

SILICON400mALOWNOISEZENERDIODES

•1N4099UR-1THRU1N4135UR-1AVAILABLEINJAN,JANTX,JANTXVANDJANSPERMIL-PRF-19500/435 •LEADLESSPACKAGEFORSURFACEMOUNT •LOWCURRENTOPERATIONAT250µA •METALLURGICALLYBONDED MAXIMUMRATINGS JunctionandStorageTemperature:-65°Cto+175°C DCPowerDissipation:50

1N4116CUR

GLASSSURFACEMOUNT0.5WATTZENERS

DESCRIPTION The1N4099URthru1N4135URand1N4614URthru1N4627URseriesof0.5wattglasssurfacemountDO-213AAZenervoltageregulatorsprovidesaselectionfrom1.8to100voltsinstandard5tolerancesaswellastightertolerancesidentifiedbydifferentsuffixlettersonthepartnumber.