JANKCDR2N5152数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This specification covers the performance requirements for NPN, silicon, power, 2N5152 and 2N5154 transistors, complimentary to the 2N5151 and 2N5153 transistors for use in high-speed power-switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/544. Two levels of product assurance (JANHC and JANKC) are provided for each unencapsulated device type. Provisions for radiation hardness assurance (RHA) to eight radiation levels (“M”, “D”, “P”, “L”, “R”, “F”, “G”, and “H”) are provided for JANTXV and JANS product assurance levels.

特性 Features

The device package outlines are as follows: similar to TO-5 and TO-39 for all encapsulated device types.
The dimensions and topography for JANHC and JANKC unencapsulated die are as outlined in MIL-PRF-19500/544.

简介

JANKCDR2N5152属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的JANKCDR2N5152晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。