NPN Silicon Low-Power 250V to 350V, 1A

This specification covers the performance requirements for NPN, silicon, low-power, high voltage 2N3439, 2N3439L, 2N3439UA, 2N3439U4, 2N3439UB, 2N3440, 2N3440L, 2N3440UA, 2N3440U4 and 2N3440UB transistors. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsula The device package for the encapsulated device type are as follows: Three terminal round metal can modified TO-205AA (formerly similar to TO-5) and modified TO-205-AD (formerly similar to TO-39) , surface mount version (UA) and surface mount version (U4) and surface mount version (UB, UBC). \nThe di;

Microchip

微芯科技

Package：TO-205AD，TO-39-3 金属罐；包装：散装 类别：分立半导体产品 晶体管 - 双极性晶体管（BJT）- 单个 描述：RH POWER BJT

Microchip

微芯科技

NPN LOW POWER SILICON TRANSISTOR

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368

文件：312.18 Kbytes 页数：6 Pages

Microsemi

美高森美

This family of high-frequency, epitaxial planar transistors feature low saturation voltage.

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368

文件：312.18 Kbytes 页数：6 Pages

Microsemi

美高森美

NPN LOW POWER SILICON TRANSISTOR

NPN LOW POWER SILICON TRANSISTOR Qualified per MIL-PRF-19500/368

文件：312.18 Kbytes 页数：6 Pages

Microsemi

美高森美