JAN2N7372数据手册分立半导体产品的晶体管-双极性晶体管（BJT）-单个规格书PDF

描述 Description

This specification covers the performance requirements for PNP, silicon, through hole power, 2N7372 transistors for use in high-speed power switching applications. Four levels of product assurance (JAN, JANTX, JANTXV and JANS) are provided for each encapsulated device as specified in MIL-PRF-19500/612. The device package outlines are as follows: Three terminal round metal can modified TO-254AA (T1) for all encapsulated device types.

简介

JAN2N7372属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的JAN2N7372晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。