N-CHANNEL MOSFET Qualified per MIL-PRF-19500/543

DESCRIPTION This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications. These devices are also available in a thru hole TO-254AA leaded package. Microsemi also offers numerous other transistor products to

文件：1.0066 Mbytes 页数：9 Pages

MICROSEMI

美高森美

High-Reliability Transistors

This family of 2N6764, 2N6766, 2N6768 and 2N6770 switching transistors are military qualified up to the JANTXV level for high-reliability applications.  These devices are also available in a thru hole TO-254AA leaded package.  Microsemi also offers numerous other transistor products to meet higher a

Microchip

微芯科技

High-Reliability Transistors

This family of 2N6764T1, 2N6766T1, 2N6768T1 and 2N6770T1 switching transistors are military qualified up to the JANTXV level for high-reliability applications.  These devices are also available in a thru hole TO-204AE metal can package.  Microsemi also offers numerous other transistor products to me

Microchip

微芯科技

POWER MOSFET N-CHANNEL(BVdss=500v, Rds(on)=0.40ohm, Id=12A)

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

文件：230.68 Kbytes 页数：6 Pages

IRF

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A)

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

文件：144.63 Kbytes 页数：7 Pages

IRF

TRANSISTORS N-CHANNEL(Vdss=500V, Rds(on)=0.400ohm, Id=12A)

The HEXFET technology is the key to International Rectifier’s advanced line of power MOSFET transistors. The efficient geometry and unique processing of this latest “State of the Art” design achieves: very low on-state resistance combined with high transconductance; superior reverse energy and dio

文件：144.63 Kbytes 页数：7 Pages

IRF