JAN2N335中文资料NPN Silicon Low-Power 45V, 0.01A数据手册Microchip规格书

描述 Description

This specification covers the performance requirements for NPN, Silicon, low-power 2N333, 2N335 and 2N336 transistors with one level of product assurance (JAN) provided for each device type as specified in MIL-PRF-19500/37. The device packages outline for this family of components are a TO-5 (for isolated leads only) and TO-205AA for all encapsulated device types.

简介

JAN2N335属于分立半导体产品的晶体管-双极性晶体管（BJT）-单个。由制造生产的JAN2N335晶体管 - 双极性晶体管（BJT）- 单个分立式双极结型晶体管 (BJT) 通常在音频、无线电及其他应用中用于构建模拟信号放大功能。作为大批量生产的第一批半导体器件之一，对于涉及高频开关和在大电流或高电压下工作的应用而言，它们的特性相比某些器件类型不占优势，但对于需要以极小的噪声和失真构建模拟信号的应用而言，它们仍然是首选技术。