JAN1N6912UTK2数据手册分立半导体产品的二极管-整流器-单规格书PDF

描述 Description

This Defense Logistics Agency (DLA) qualified Schottky diodes offer great value for aerospace and defense applications requiring high density power and excellent heat dissipation (typically 0.85 - 0.95 degrees C per Watt (C/W)). The 1N6910UTK2AS through 1N6912UTK2AS device polarity is anode-to-strap (standard) and is also available optionally in 1N6910UTK2CS through 1N6912UTK2CS as cathode-to-strap. This part can also be ordered in a strapless version. Up-screening for high-reliability applications is also available. Microchip also offers numerous other products to meet higher and lower power voltage regulation applications.

特性 Features

JEDEC registered 1N6910 – 1N6912 number series
Oxide passivated structure
Guard ring protection for increased reverse energy capability
Epitaxial structure minimizes forward voltage drop
Hermetically sealed, low profile ceramic surface mount power package
JAN, JANTX, and JANTXV qualifications are available per MIL-PRF-19500/723
(See part nomenclature for all available options)
RoHS compliant versions available (commercial grade only) Low package inductance
Very low thermal resistance
Also available with no strap as 1N6910UTK2, 1N6911UTK2 and 1N6912UTK2 by special request Rugged ceramic and metal construction with no wire bonds
High surge capabilities and enable double-side cooling

简介

JAN1N6912UTK2属于分立半导体产品的二极管-整流器-单。由制造生产的JAN1N6912UTK2二极管 - 整流器 - 单单整流器二极管系列产品可用于让电流仅沿一个方向流动，并且每个器件封装都恰好实现该功能的一个实例。其他用途的二极管（包括齐纳二极管和可变电容二极管）单独列在各自的产品系列中，每个器件封装中包含多个二极管的产品也是如此。