JAN1N5619

MILITARY RECTIFIERS

DESCRIPTION This“fastrecovery”rectifierdiodeseriesismilitaryqualifiedtoMIL-PRF-19500/429andisidealforhigh-reliabilityapplicationswhereafailurecannotbetolerated.Theseindustry-recognized1.0Ampratedrectifiersforworkingpeakreversevoltagesfrom200to1000voltsarehe

JAN1N5619

HERMETIC AXIAL LEAD/MELF RECTIFIER

FastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C

JAN1N5619

Rectifier Diode Switching 2-Pin 600V, 1A, 250ns Case A Bag; Popular JEDEC registered 1N5615 to 1N5623 series\nVoidless hermetically sealed glass package\nTriple-Layer Passivation\nInternal “Category I” Metallurgical bonds\nWorking Peak Reverse Voltage 200 to 1000 Volts\nJAN, JANTX, JANTXV, and JANS available per MILPRF-19500/429\nSurface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5615US thru 1N5623US)\nFast recovery 1 Amp rectifiers 200 to 1000V\nMilitary and other high-reliability applications\nGeneral rectifier applications including bridges, halfbridges, catch diodes, etc\nHigh forward surge current capability\nExtremely robust construction\nLow thermal resistance\nControlled avalanche with peak reverse power capability\nInherently radiation hard as described in Microchip MicroNote 050.;

This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5615US thru 1N5623US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

JAN1N5619

Package：轴向；包装：卷带（TR） 类别：分立半导体产品 二极管 - 整流器 - 单 描述：D MET 1A FAST 600V

JAN1N5619

Package：A，轴向；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 1A AXIAL

JAN1N5619-TR

Rectifier Diode Switching 2-Pin 600V, 1A, 250ns Case A Bag T/R; Popular JEDEC registered 1N5615 to 1N5623 series\nVoidless hermetically sealed glass package\nTriple-Layer Passivation\nInternal “Category I” Metallurgical bonds\nWorking Peak Reverse Voltage 200 to 1000 Volts\nJAN, JANTX, JANTXV, and JANS available per MILPRF-19500/429\nSurface mount equivalents also available in a square end-cap MELF configuration with “US” suffix (see separate data sheet for 1N5615US thru 1N5623US)\nFast recovery 1 Amp rectifiers 200 to 1000V\nMilitary and other high-reliability applications\nGeneral rectifier applications including bridges, halfbridges, catch diodes, etc\nHigh forward surge current capability\nExtremely robust construction\nLow thermal resistance\nControlled avalanche with peak reverse power capability\nInherently radiation hard as described in Microchip MicroNote 050.;

This “fast recovery” rectifier diode series is military qualified to MIL-PRF-19500/429 and is ideal for high-reliability applications where a failure cannot be tolerated. These industry-recognized 1.0 Amp rated rectifiers for working peak reverse voltages from 200 to 1000 volts are hermetically sealed with voidless-glass construction using an internal “Category I” metallurgical bond. These devices are also available in surface mount MELF package configurations by adding a “US” suffix (see separate data sheet for 1N5615US thru 1N5623US). Microchip also offers numerous other rectifier products to meet higher and lower current ratings with various recovery time speed requirements including fast and ultrafast device types in both through-hole and surface mount packages.

JAN1N5619UL

HERMETIC AXIAL LEAD/MELF RECTIFIER

FastRecoveryRectifier •Hermetic,non-cavityglasspackage •Metallurgicallybonded •OperatingandStorageTemperature:-65°Cto+175°C

JAN1N5619US

Package：SQ-MELF，A；包装：散装 类别：分立半导体产品 二极管 - 整流器 - 单 描述：DIODE GEN PURP 600V 1A D5A